Data-driven Approach to Material Removal Rate Prediction in Chemical Mechanical Polishing

Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling

The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is = removed, wh...

A statistical model for material removal prediction in polishing

This paper develops analytically a statistical model for predicting the material removal in mechanical polishing of material surfaces (MS). The model was based on the statistical theory and the abrasive–MS contact mechanisms. The pad-MS and pad-abrasive-MS interactions in polishing were characterised by contact mechanics. Two types of active abrasive particles in the polishing system were consi...

Effects of Surface Forces on Material Removal Rate in Chemical Mechanical Planarization

In chemical mechanical planarization, abrasive particles are pushed onto a wafer by a deformable pad. In addition to the pad–particle contact force, surface forces also act between the wafer and the particles. Experimental studies indicate the significance of slurry pH and particle size on the material removal rate MRR . In this work, a model for MRR, including the contact mechanics of multiple...

A Mechanical Model for Erosion in Copper Chemical-mechanical Polishing

The Chemical-mechanical polishing (CMP) process is now widely employed in the ultra-large-scale integrated semiconductor fabrication. Due to the continuous decrease in the sub-micron feature size, characterization of erosion has become an important issue in Cu CMP. In this paper, the erosion in Cu CMP is considered at two levels: wafer and die levels. Erosion models are developed based on the m...

Laser Assisted Chemical Mechanical Polishing for Planarization